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  4. Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes
 
research article

Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

Scheibenzuber, Wolfgang G.
•
Hornuss, Christian
•
Schwarz, Ulrich T.
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2011
Applied Physics Express

We study the influence of pump current and absorber bias voltage on the pulse width and frequency of sustained pulsation in GaN-based multisection laser diodes. The observed frequencies and pulse widths range from 1.5 to 4.5GHz and 90 to 18 ps, respectively. Negative absorber bias is found to reduce the pulsation frequency and increase the pulse width. This behavior is explained by the tuneability of absorption and charge carrier lifetime in the absorber via the applied bias voltage. (C) 2011 The Japan Society of Applied Physics

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Type
research article
DOI
10.1143/APEX.4.062702
Web of Science ID

WOS:000291479300017

Author(s)
Scheibenzuber, Wolfgang G.
Hornuss, Christian
Schwarz, Ulrich T.
Sulmoni, Luca  
Dorsaz, Julien  
Carlin, Jean-Francois  
Grandjean, Nicolas  
Date Issued

2011

Published in
Applied Physics Express
Volume

4

Issue

6

Article Number

062702

Subjects

Semiconductor-Lasers

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Available on Infoscience
December 16, 2011
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/73996
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