In this letter we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) co-integration with 380 ìm-height Cu Through Silicon Via (TSV) arrays for programmable 3D interconnects. Nonvolatile resistive switching of Pt/TiO2/Pt thin films are first characterized with resistance ratio up to 5 orders of magnitude. Then co-integration of Pt/TiO2/Pt or Pt/TiO2 memory cells on 140 um and 60 um diameter Cu TSV are fabricated. Repeatable non-volatile bipolar switching of the ReRAM cells are demonstrated for different structures.