Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics

• Published in: IEEE Transactions on Nanotechnology (ISSN: 1536-125X), vol. 11, num. 1, p. 8-11
• Institute of Electrical and Electronics Engineers, 2012

In this letter we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) co-integration with 380 ìm-height Cu Through Silicon Via (TSV) arrays for programmable 3D interconnects. Nonvolatile resistive switching of Pt/TiO2/Pt thin films are first characterized with resistance ratio up to 5 orders of magnitude. Then co-integration of Pt/TiO2/Pt or Pt/TiO2 memory cells on 140 um and 60 um diameter Cu TSV are fabricated. Repeatable non-volatile bipolar switching of the ReRAM cells are demonstrated for different structures.

Keywords: ReRAM ; TSV ; TiO2 ; memristor ; memristive systems ; 3D-integration

Reference

• EPFL-ARTICLE-167578
• doi:10.1109/TNANO.2011.2160557
• View record in Web of Science

Record created on 2011-07-15, modified on 2012-03-28