In this paper we present the top-down fabrication of gate-all-around (GAA) and body-tied @W-gate devices by a combination of etching and oxidation steps resulting in a local silicon-on-insulator structure. The GAA has advantages in terms of enhanced current drive, whereas the body-strapped structures allow for active leakage control and in some cases impact ionization devices. We demonstrate an inverter fabricated along a single silicon rib. The inverter consists of two enhancement mode body-strapped @W-gate NMOS transistors. Static and dynamic experiments demonstrate a fully functional inverter with the output experiencing V"D"D/2 voltage swing, as expected for an NMOS inverter with identical driver and load dimensions. In addition, we propose the use of these devices for cross-bar memory addressing.