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  4. Quantitative analysis of electron-beam-induced current profiles across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures
 
research article

Quantitative analysis of electron-beam-induced current profiles across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures

Bonard, J. M.
•
Ganiere, J. D.  
1996
Journal of Applied Physics

We propose a method for the quantitative evaluation of electron-beam-induced current profiles measured in normal-collector geometry across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures. We obtain a theoretical expression, valid for all distances from the junction, and which takes into account the spatial extension of the electron-hole pairs generation. From the comparison of calculated with experimental profiles, we evaluate the minority carrier diffusion length and to some extent the surface recombination velocity. (C) 1996 American Institute of Physics.

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Type
research article
DOI
10.1063/1.361464
Web of Science ID

WOS:A1996UJ08400044

Author(s)
Bonard, J. M.
Ganiere, J. D.  
Date Issued

1996

Published in
Journal of Applied Physics
Volume

79

Issue

9

Start page

6987

End page

6994

Subjects

SURFACE RECOMBINATION VELOCITY

•

CARRIER DIFFUSION LENGTHS

•

SEMICONDUCTORS

•

MICROSCOPY

•

SEM

Note

Bonard, JM, ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND.

ISI Document Delivery No.: UJ084

Cited Reference Count: 29

Cited References:

AKAMATSU B, 1989, J MICROSC SPECTROSC, V14, A12

AUKERMANN LW, 1967, J APPL PHYS, V38, P685

BEGGAH Y, 1994, MAT SCI ENG B-SOLID, V24, P101

BERZ F, 1976, SOLID ST ELECTRON, V19, P437

BONARD JM, IN PRESS J APPL PHYS

BRESSE JF, 1982, SCANNING ELECTRON MI, V4, P1487

DONOLATO C, 1982, SOLID ST ELECTRON, V25, P1077

DONOLATO C, 1994, J APPL PHYS, V76, P959

HACKETT WH, 1972, J APPL PHYS, V43, P1649

HACKETT WH, 1972, J APPL PHYS, V43, P2857

HOLT DB, 1989, SEM MICROCHARACTERIZ

JASTRZEBSKI L, 1975, APPL PHYS LETT, V27, P537

KONNIKOV SG, 1988, SOV PHYS SEMICOND, V21, P1229

LEAMY HJ, 1982, J APPL PHYS, V53, R51

LUKE KL, 1985, J APPL PHYS, V57, P1978

LUKE KL, 1994, J APPL PHYS, V75, P1623

OELGART G, 1981, PHYS STATUS SOLIDI A, V66, P283

ONG VKS, 1994, SOLID STATE ELECTRON, V37, P1

ORTON JW, 1990, ELECT CHARACTERIZATI

PERANSIN JM, 1986, PHYS STATUS SOLIDI A, V94, P713

REIMER L, 1985, SCANNING ELECTRON MI, CH7

SIEBER B, 1994, MAT SCI ENG B-SOLID, V24, P35

VANROOSBROECK W, 1955, J APPL PHYS, V26, P380

WATANABE M, 1977, IEEE T ELECTRON DEV, V24, P1172

WERNER U, 1988, J PHYS D, V21, P116

WITTRY DB, 1965, J APPL PHYS, V36, P1387

WITTRY DB, 1967, J APPL PHYS, V38, P375

WU CJ, 1978, J APPL PHYS, V49, P2827

ZOOK JD, 1983, APPL PHYS LETT, V42, P602

Editorial or Peer reviewed

REVIEWED

Written at

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Available on Infoscience
August 31, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/11199
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